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Enhanced photoelectrochemical activity using NiCo2S4 / spaced TiO2 nanorod heterojunction
- Nagappagari, Lakshmana Reddy;
- Patil, Santosh S.;
- Lee, Jaewon;
- Park, Eunoak;
- Yu, Yeon-Tae;
- ... Lee, Kiyoung
WEB OF SCIENCE
10SCOPUS
11초록
The photoelectrochemical (PEC) process is one of the most promising techniques for converting solar energy directly into clean fuels and for environmental remediation applications. One-dimensional (1D) TiO2 nanostructure arrays are extensively studied morphologies for a wide range of catalytic processes, including photocatalysis (PC) and PEC reactions for water splitting. In this study, a well-aligned spaced TiO2 nanorod (TNR) arrays were uniformly grown on a fluorine-doped tin oxide (FTO) substrate, and thermal exfoliation of the TNRs, which appeared as small islands, was investigated. The calcination time, which ranged from 1 to 5 h at 400 degrees C, had a significant impact on the agglomerated TNRs islands, which tended to be uniformly exfoliated as spaced nanorods and eventually improved the PEC performance. The regularly arranged spaced nanorods allow for the efficient transfer of internal charge carriers within the TNRs. Furthermore, the heterojunction formation with NiCo2S4 via the successive ionic layer adsorption and reaction (SILAR) method, substantially improve PEC performance, owing to reduced charge carrier recombination at the interface of the heterojunction. The Mott-Schottky analysis strongly supports the improved charge carrier density at the heterojunction interface. The improved life time of the charge carriers was investigated by comparing the time-resolved photoluminescence spectra for the TiO2/NiCo2S4 heterojunction with pristine TNRs, which was eventually confirmed by incident photon-to-current efficiency analysis.
키워드
- 제목
- Enhanced photoelectrochemical activity using NiCo2S4 / spaced TiO2 nanorod heterojunction
- 저자
- Nagappagari, Lakshmana Reddy; Patil, Santosh S.; Lee, Jaewon; Park, Eunoak; Yu, Yeon-Tae; Lee, Kiyoung
- 발행일
- 2022-01-01
- 유형
- Article
- 권
- 48
- 호
- 1
- 페이지
- 920 ~ 930