일괄식각공정으로 제작된 Hgih-k 유전박막의 MIS 커패시터의 플라즈마 damage 분석

초록

In this paper, we report the plasma damage of MIS capacitor with Al2O3 dielectric film. Using capacitor pattern with the same area but different perimeters, we tried to separate leakage current components by etching damage mechanism and to optimize the dry etching process. After etching both metal and dielectric layer by the same plasma condition, leakage current and C-V measurements were carried out for Pt/Al2O3/Si structures. We found that the plasma damage was increased as RF power decreased. Furthermore, the leakage current was higher at the periphery than at the bulk region It is thought that the damage is caused mainly by the ARDE (aspect ratio dependent etching) characteristics.