Ta2O5-doped Indium Zinc Oxide thin films fabricated by RF magnetron co-sputtering

초록

Over past years, several binary, ternary, and quaternary oxide semiconductors e.g. ZnO, indium-zinc oxide (IZO), zinc-tin oxide (ZTO) and gallium-indium-zinc oxide (GIZO) have been studied as an active channel layer for thin film transistor (TFT). Especially, IZO-based system is a leading candidate for high TFT performance due to its large field effect mobility. However, it is necessary to control the carrier concentration to allow well-behaved TFT characteristics because IZO TFT high carrier concentration. In this study, we selected a tantalum oxide (Ta2O5) material to control the carrier concentration of IZO film and studied the effect of oxygen partial pressure (Po2) on structural, electrical and optical properties of thin tantalum doped indium zinc oxide (TaInZnO) films. TaInZnO film deposited by radio frequency (RF) magnetron co-sputtering using 4 inch IZO target composed of (In2O3)1-x(ZnO)x (x=50 wt.%) and Ta2O5 target has been investigated. Detailed electrical performance of TaInZnO TFT with a bottom-gate configuration was presented and discussed.