실시간성이 향상된 고전압 전력 반도체용 양방향 온-상태 전압 측정 회로 및 기법

초록

The on-state voltage of power semiconductor devices is a critical parameter for predicting device degradation and remaining useful lifetime, underscoring the importance of accurate measurements. This study proposes a novel on-state voltage measurement circuit featuring a gate-signal-synchronized measurement mechanism and a noise suppression circuit. This design can mitigate interference caused by parasitic elements of the power device under test. The proposed architecture enables bidirectional voltage sensing and introduces a tunable configuration factor, allowing flexible adaptation to a wide range of power switching devices. Furthermore, a dedicated measurement technique is adopted to compensate for the zero-voltage offset, improving the overall accuracy and reliability of the on-state resistance estimation.

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