A Study on destructive characteristics of AND gate logic element at variable pulse repetition rate

초록

This paper examines the destruction behavior of AND gate logic semiconductor by variable repetition pulse. The injected pulse has maximum peak voltage of 2kV. Pulse was injected into the pin of AND gate logic semiconductor. When the AND gate destroyed, output turned off even when the input was high state. The cause of AND gate destruction was considered to be thermal damage by the current of the injected pulse. The destruction threshold deacresed with increasing p ulse repetition rate because more energy was injected into AND gate.