Ferroelectric Properties of PZT based Composite Film Fabricated by Aerosol Deposition Method

초록

To achieve a high energy storage density, the permittivity and dielectric breakdown voltage should be increased and hysteresis of ferroelectric material should be diminished to decrease the loss. This study attempts to reduce the hysteresis of PZT with high permittivity to increase energy storage density. The PZT based films mixed the three different compositions [PbZr0.52Ti0.48O3], [PbZr0.82Ti0.18O3], [PbZr0.18Ti0.82O3], were fabricated on a Si-Pt substrate using the AD method. AD method gives high dense thick films with nano-sized grains at room temperature. The AD films were heat treated at 450, 550 and 650℃ to control the degree of crystallinity and grain growth. The chemical reaction at the interface between the different PZT compositions was achieved through heat-treatment. The nano-size effect of grains demonstrates that the permittivity relaxed with temperature in the Dielectric permittivity verse temperature measurement. The hysteresis was increased as the annealing temperature changed from 450 to 550℃ through P-E measurement. And the crystallinity peak shift was observed by XRD. Energy storage density was measured with a unipolar.