Lanthanum 조성변화에 따른 강유전체 Bi4-xLaxTi3O12 박막의 구조적, 전기적 특성

초록

Ferroelectric Bi4-xLaxTi3O12 thin films were prepared by chemical solution deposition using bismuth acetate, lanthanum acetate and titanium isopropoxide as precursors. The BLT thin films were deposited as a function of lanthanum composition. The structure and the surface morphology of the BLT thin films were characterized by x-ray diffraction and field emission scanning electron microscopy. The electrical measurements were performed using a RT66A. The BLT films doped with x=0.75 were found to exhibit better electrical properties than those doped with other La compositions. The remanent polarization(2Pr) and the coercive voltage(Vc) of BLT thin film with x=0.75 were 11.1 μC/cm2 and 1.3 V.