Inductively Coupled Plasma Etching of Pb(ZrXTi1-X)O3 Thin Films in Cl2/C2F6 and HBr plasmas

초록

Pb(ZrXTi1-X)O3 thin films were etched in an inductively coupled plasma by using various etch gases such as Cl2/Ar, C2F6/Ar, Cl2/C2F6/Ar and HBr/Ar. The etch rates and etch profiles for each etch gas were investigated. The faster etch rates were obtained in chlorine-containing etch gases (e.g., Cl2/Ar and Cl2/C2F6/Ar), and the clean and steep etch profiles were achieved in Cl2/C2F6/Ar or HBr/Ar gases. The gas mixture of Cl2 and C2F6 was proposed to give fast etch rate and steep sidewall angle of etched patterns. The optimum gas mixture of Cl2/C2F6/Ar was found by varying the gas ratio of Cl2 to C2F6. On the other hand, HBr/Ar gas as an alternative for the etching of Pb(ZrXTi1-X)O3 films was tried. The comparison of Cl2/C2F6/Ar and HBr/Ar etch gases were made with respect to etch rate, etch profile and electrical properties.