Uniaxially Compressively Strained Ge (100)-OI p-MOSFET for High-Performance CFET

초록

In this work, asymmetric strain relaxation, induced by channel width ( Wch) scaling, offers a scalable lever to realize high-mobility p-type channels for next-generation complementary field-effect transistors (CFETs). We demonstrate that the strained Ge-on-insulator (sGe-OI) p-channel MOSFETs (p-MOSFETs) in which Wch scaling induces quasi-uniaxial compression along [110] via asymmetric strain relaxation is realized by combining strain-relaxed buffer (SRB)-based heteroepitaxy and direct wafer bonding (DWB). Using a 32-nm-thick sGe channel, the quasi-uniaxially compressively sGe (100)/<110>-OI p-MOSFET with a Wch of 90 nm, corresponding to an estimated compressive strain of approximately -0.2% based on Raman peak-shift analysis, achieves a high effective hole mobility ( mu (eff)) of 1154 cm(2)/V & sdot; s. These results indicate that the sGe channel realized by this approach is a strong candidate for p-MOSFET in high-performance CFET applications.

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