Inductively Coupled Plasma Etching of Pb(ZrXTi1-X)O3 Thin Film in a HBr/Ar Plasma

초록

Pb(ZrXTi1-X)O3 (PZT) films have been studied for many applications such as ferroelectric random access memory (FeRAM), microelectromechanical system (MEMS), pyroelectric detector. Many studies for the etching of PZT films have been reported using various etching techniques including ion milling, reactive ion etching (RIE) [1], high density plasma etching [2]. In this work, the etching of PZT films was carried out by using a HBr/Ar chemistry in an inductively coupled plasma (ICP).