Investigation on Etch Characteristics Of GeSbTe Thin Films for Phase-Change Memory

초록

Recently, a novel memory device using a phase-change material has attracted great attention. This nonvolatile memory is called as phase-change memory. Its operating principle is based on the fact that the crystalline phase of phase change material is changed to an amorphous phase and the amorphous phase is changed to a crystalline phase by proper heating [1]. Ge-Sb-Te alloys are well suited as a phase-change material. Among the stoichiometric compositions of this ternary system, Ge2Sb2Te5 (GST) films have been known to be one of the most suitable materials for these applications [1-3].