Implementation of enhancement-mode InGaAs/InAlAs HEMTs by hole delta-doping in a buffer-layer: A simulation study

초록

We analyzed the fabrication method and DC characteristics of an InGaAs/InAlAs enhancement-mode (E-mode) high-electron mobility transistor (HEMT) with hole delta(delta)-doping applied to the InAlAs buffer layer through simulation results. At a drain voltage (VD) = 0.5 V, the threshold voltage (VTH) was -0.65 V for the device without hole delta-doping in the buffer layer. However, the VTH increased to a maximum of 0.03 V at VD = 0.5 V by modifying the ratio of electron delta-doping and applying optimal hole delta-doping to the buffer layer. This was attributed to the hole delta-doping inducing energy band bending in the channel and minimizing impurity scattering. These results confirm that epitaxial engineering enables E-mode HEMT operation, contributing to reduced power consumption and optimizing circuit design for future applications.

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