Deep etching of copper thin film using high-density plasma of hydrocarbon/alcohol gases

초록

In this paper, we studied dry etching of copper thin films for high-efficiency next-generation display devices. For fast etch rate in without deposition, dry etching mechanism is newly designed using CH4 and C2H5OH gases in Cu thin film. The etching properties of the copper thin films were examined by changing the gas concentration in the CH4/C2H5OH/Ar gases. The effects of the etch parameters, including the ICP RF power, DC bias voltage to the substrate, and process pressure, on the etch properties were examined. Optical emission spectroscopy and X-ray photoelectron spectroscopy analyses were performed to elucidate the dry etching mechanism for copper thin films. Copper thin films patterned with a 3-μm line were etched as deep as 600 nm, and an etching profile with a sidewall slope of approximately 60° without redeposition was secured under the optimized etch condition.

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