CFx 플라즈마 기반 Ru 영역 선택적 원자층증착법을 통한배선 성능 향상

초록

As semiconductor devices continue to scale down, the traditional top-down patterning approach using photolithography has encountered a number of challenges including higher process costs and frequent edge placement errors which lead to yield reduction. In response, area selective atomic layer deposition (AS-ALD), a bottom-up patterning technique, has emerged as a promising alternative. AS-ALD enables the selective deposition of thin films with atomic-level precision on specific areas, making it particularly promising in system semiconductor interconnects. Here, we developed an AS-ALD process for ruthenium (Ru), a next-generation interconnect material that exhibits excellent resistivity characteristics even in ultra-fine patterns. Through CFx plasma treatment, selective deposition of Ru was achieved by deactivating specific substrate surface regions.