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2023 2026
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전체 46건 중 1번부터 10번까지의 결과를 표시합니다.
2026
Article
Atomic layer deposition of Ga2O3 over a wide temperature range using a novel heteroleptic precursor (N,N-di-tert-butylacetimidamido)dimethylgallium (DBADMGa)
- Hwang, Inhong ;
- Lee, Jun Yong ;
- Jeon, Dahui ;
- Choi, Rino ;
- Lee, Jeong-Hwan ;
- ... Park, Noh-Hwal ;
- ... Chung, Chee Won ;
- ... Baek, In-Hwan ;
- 외 3명
- 2026-10
- Applied Surface Science
- ELSEVIER
Article
Humidity-mediated room-temperature NO2 sensing using 2D SnS2 nanoplates
- Song, Young Geun ;
- Baek, In-Hwan ;
- Kim, Gwang Su ;
- Chun, Suk Yeop ;
- Lee, Sung Kwang ;
- 외 3명
- 2026-05-30
- Applied Surface Science
- ELSEVIER
2025
Article
Kinetically Confined Sulfurization for Continuous Growth of Layered SnS Films
- Ryu, Seung Ho ;
- Choe, Minki ;
- Hwang, Inhong ;
- Lee, Sung Kwang ;
- Chung, Taek-Mo ;
- ... Baek, In-Hwan ;
- 외 1명
- 2025-12-09
- Chemistry of Materials
- American Chemical Society
Article
Atomic layer deposition of conductive SnO2 thin films using Sn(dmamp)2 and H2O2 for templating rutile TiO2 growth
- Hwang, Inhong ;
- Jung, Yoohyeon ;
- Choe, Minki ;
- Lee, Sung Kwang ;
- Chung, Taek-Mo ;
- ... Baek, In-Hwan
- 2025-11
- Applied Surface Science
- ELSEVIER
Article
Optimizing the crystallinity of ZrO2 gate insulator in indium gallium zinc oxide thin-film transistors through atomic layer deposition process temperature control
- Jeong, Hanseok ;
- Yoo, Soo-min ;
- Choe, Minki ;
- Baek, Inhwan ;
- Jeon, Woojin
- 2025-11
- Scientific Reports
- Nature Research
Article
Oxygen ambient annealing-driven contact engineering and channel property modulation in tungsten/InGaZnO thin-film transistors for BEOL-compatible integration
- Byun, Woosub ;
- Kim, Bongho ;
- Han, Songyi ;
- Kang, Yeonbin ;
- Kim, Sanghyeon ;
- ... Baek, Inhwan ;
- ... Geum, Daemyeong
- 2025-11
- Results in Physics
- Elsevier B.V.
Article
Effective p-type doping for leakage current reduction of ZrO2 by employing Sc2O3
- Nam, Jihun ;
- Lee, Seungwoo ;
- Oh, Hansol ;
- Kim, Hanbyul ;
- Park, Yongjoo ;
- ... Baek, In-Hwan ;
- 외 1명
- 2025-06-15
- Materials Science in Semiconductor Processing
- Pergamon Press
Article
Stabilization of top-gate p-SnO transistors via ultrathin Al2O3 interlayers for hysteresis-free operation
- Choe, Minki ;
- Ryu, Seung Ho ;
- Jeon, Jihoon ;
- Hwang, Inhong ;
- Jung, Jae Min ;
- ... Park, Noh-Hwal ;
- ... Baek, In-Hwan ;
- 외 4명
- 2025-05
- Journal of Materials Chemistry C
- Royal Society of Chemistry
Article
Ultrahigh field-effect mobility of 147.5 cm<SUP>2</SUP>/Vs in ultrathin In2O3 transistors via passivating the surface of polycrystalline HfO2 gate dielectrics
- Kim, Taikyu ;
- Ryu, Seung Ho ;
- Jeon, Jihoon ;
- Kim, Taeseok ;
- Baek, In-Hwan ;
- 외 1명
- 2025-01-20
- Applied Physics Letters
- American Institute of Physics
Article
Plasma-enhanced atomic layer deposition of indium-free ZnSnOx thin films for thin-film transistors
- Ryu, Seung Ho ;
- Hwang, Inhong ;
- Jeon, Dahui ;
- Lee, Sung Kwang ;
- Chung, Taek-Mo ;
- ... Baek, In-Hwan ;
- 외 3명
- 2025-01
- Applied Surface Science
- Elsevier BV
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