ScholarWorks@인하대학교

상세 보기

Study on the Effect of Fixed Charge in Passivation Layer for Enhancement-Mode p-GaN Gate HEMTs

제목
Study on the Effect of Fixed Charge in Passivation Layer for Enhancement-Mode p-GaN Gate HEMTs
저자
Geum, Daemyeong
학회명
ITC-CSCC

ScholarWorks@인하대학교

22212 인천광역시 미추홀구 인하로 100 정석학술정보관 Tel. 032-860-9003

COPYRIGHT © 인하대학교 All Rights Reserved.

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.

You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.