Atomic Layer Deposition of Indium-oxide Using DBADMIn Precursor for Thin Film Transistor

초록

Indium oxide is emerging as a promising material for thin-film transistors(TFTs), extending from display applications to monolithic 3D (M3D) integration for memory devices such as 3D DRAM. The low thermal budget of atomic layer deposition(ALD) makes it compatible with M3D fabrication, preventing thermal damage to underlying layers. Furthermore, ALD-based vertical channel-all-around(CAA) structures present the potential to implement capacitor-less 2T0C DRAM.[1] This approach demonstrates the feasibility of achieving 2F2 scaling. Additionaly, the inherently low off-current of oxide semiconductors makes them well-suited for low-power consumption devices. In this research, we demonstrate notable electrical performance using a indium oxide channel layer with a 2 nm thickness. The high mobility of 38 cm2 V-1 s-1 was accompanied by outstanding positive bias stress (PBS) stability. Consequently, it successfully addressed the mobility-stability trade-off characteristic of oxide semiconductors caused by oxygen vacancies as point defects. These results highlight the scalability and applicability of indium oxide TFTs for next-generation memory devices.