Etch characteristics of CoZrNb and CoFeTb magnetic films in a high density plasma

초록

The development of nonvolatile memory such as magnetoresistive random access memory (MRAM) as well as the magnetic read/write heads based on giant magnetoresistance (GMR) requires the advanced patterning of magnetic thin films. As the density of these devices increases, the minimum critical dimensions of magnetic films and magnetic multilayer stacks should be also diminished. Currently the patterning of magnetic thin films and magnetic multilayer stacks has been carried out by ion milling or reactive ion etching. However, the ion milling process by energetic argon ion results in redeposition on the sidewall of the films and poor magnetic switching characteristics such as the reduction of MR ratio.