Influence of C2F6 Addition to Cl2/Ar Gas on Nanometer-Scale Etch Characteristics of TiN Thin Films Using Inductively Coupled Plasma

초록

Micro- and nano-scale patterned TiN thin films were etched in Cl-2/Ar and Cl-2/C2F6/Ar gases by inductively coupled plasma reactive ion etching. As C2F6 gas was added to the Cl-2/Ar gas mixture, the etch profile of the TiN films was improved and the etch selectivity of the TiN film to the E-beam resist was increased. X-ray photoelectron spectroscopy revealed various etch by-products and polymer layers on the etched film surface. Overall, the addition of C2F6 to Cl-2/Ar gas was quite effective in improving the etch profile and could contribute to the higher anisotropic etch profile of nano-scale patterned TiN thin films. (C) 2018 The Electrochemical Society.

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